Fig 2 - Surface sputtering data (PDF Figure)

Surface sputtering characteristics after ion implantation: (a) $\Delta z$ as a function of ion fluence calculated for ion energies of 50 keV (red dashed line) and 60 keV (blue dotted line) with $\alpha=7$\deg~and $E_{sb}=5.17$ eV, assuming a two-layered Si/SiO$_2$ stack. Simulations performed for different values of $(\alpha, E_{sb})$ at a fixed ion energy of 50 keV are shown in the inset. Both axes in the inset figure are plotted on a linear scale and the horizontal axis has the same ion fluence range as the main sub-figure. (b) Experimentally measured relationship between the sputtering yield, $SY$, and the sample chamber vacuum level, $p$, for experiments performed under low ion flux conditions at RT. The dashed line is a best fit as indicated by the equation. (c) $SY$ vs. ion energy illustrating both surface accumulation and erosion phenomena. Simulated data are shown as black circles (solid line to guide the eye) and a gray dashed dotted line. The experimental data points (colored) are from samples in this work, implanted up to an ion fluence of $0.77\times10^{18}$ cm$^{-2}$. Experimental error bars are similar in size to the data points ($\sigma_{\text{fluence}} = \pm5\%, \sigma_{\Delta z} = \pm5$ nm).