Fig 3 - 28Si, 29Si, 30Si isotopes depletion levels (PDF Figure)

SIMS measured $^{28}$Si, $^{29}$Si, $^{30}$Si isotope profiles from the following samples: (a) 50 keV $1.55\times10^{18}$ cm$^{-2}$, low flux, RT implantation on SOI and (b) 60 keV $0.77\times10^{19}$ cm$^{-2}$, high flux, RT implantation on Si. The vertical dashed line in (a) indicates the buried Si-SiO$_2$ interface. The horizontal dotted lines in (a) and (b) indicate the natural isotopic levels for each Si isotope. TRIDYN calculated [$^{29}$Si] as a function of ion fluence for a fixed ion energy of: (c) 50 keV and, (d) 60 keV, under different values of $E_{sb}$. Experimental data points from this work are also shown (stars and crosses). HI: high flux; LO: low flux.